View IRF6665TRPBF_7840192.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 08/25/06 irf6665pbf IRF6665TRPBF notes through are on page 2 applicable directfet outline and substrate outline (see p. 6, 7 for details)
description this digital audio mosfet is specifically designed for class-d audio amplifier applications. this mosfet utilizes the latest processing techniques to achieve low on-resistance per silicon area. furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-d audio amplifier performance factors such as efficiency, thd, and emi. the irf6665pbf device utilizes directfet tm packaging technology. directfet tm packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded soic packaging. lower inductance improves emi performance by reducing the voltage ringing that accompanies fast current transients. the directfet tm package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing method and processes. the directfet tm package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. these features combine to make this mosfet a highly efficient, robust and reliable device for class-d audio amplifier applications. features ? latest mosfet silicon technology ? key parameters optimized for class-d audio amplifier applications ? low r ds(on) for improved efficiency ? low q g for better thd and improved efficiency ? low q rr for better thd and lower emi ? low package stray inductance for reduced ringing and lower emi ? can deliver up to 100w per channel into 8 ? with no heatsink ? dual sided cooling compatible compatible with existing surface mount technologies rohs compliant containing no lead or bromide lead-free (qualified up to 260c reflow) absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ?? ? 58 c/w r ja junction-to-ambient 12.5 ?? ? r ja junction-to-ambient 20 ?? ? r jc junction-to-case ?? ? 3.0 r j-pcb junction-to-pcb mounted 1.4 ?? ? 42 max. 4.2 3.4 34 100 20 19 -40 to + 150 0.017 2.2 1.4 v ds 100 v r ds ( on ) typ. @ v gs = 10v 53 m q g typ. 8.7 nc r g(int) typ. 1.9 key parameters sq sx st sh mq mx mt mn directfet isometric

irf6665pbf 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.89mh, r g = 25 ? , i as = 5.0a. surface mounted on 1 in. square cu board. pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part.
r is measured at t j of approximately 90c. based on testing done using a typical device & evaluation board at vbus=45v, f sw =400khz, and t a =25c. the delta case temperature ? t c is 55c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c r ds(on) static drain-to-source on-resistance ??? 53 62 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g(int) internal gate resistance ??? 1.9 2.9 ? dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 6.6 ??? ??? s q g total gate charge ??? 8.4 13 v ds = 50v q gs1 pre-vth gate-to-source charge ??? 2.2 ??? v gs = 10v q gs2 post-vth gate-to-source charge ??? 0.64 ??? i d = 5.0a q gd gate-to-drain charge ??? 2.8 ??? nc see fig. 6 and 17 q godr gate charge overdrive ??? 2.8 ??? q sw switch charge (q gs2 + q gd ) ??? 3.4 ??? t d(on) turn-on delay time ??? 7.4 ??? t r rise time ??? 2.8 ??? t d(off) turn-off delay time ??? 14 ??? ns t f fall time ??? 4.3 ??? c iss input capacitance ??? 530 ??? c oss output capacitance ??? 110 ??? c rss reverse transfer capacitance ??? 29 ??? pf c oss output capacitance ??? 510 ??? c oss output capacitance ??? 67 ??? c oss eff. effective output capacitance ??? 130 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 38 (body diode) a i sm pulsed source current ??? ??? 34 (body diode) v sd diode forward voltage ??? ??? 1.3 v t r r reverse recovery time ??? 31 ??? ns q r r reverse recovery charge ??? 37 ??? nc typ. ??? ??? conditions v ds = 10v, i d = 5.0a conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 11 5.0 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 5.0a, v gs = 0v t j = 25c, i f = 5.0a, v dd = 25v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 5.0a v ds = v gs , i d = 250a v ds = 100v, v gs = 0v v ds = 80v, v gs = 0v, t j = 125c v gs = 20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 80v, ? = 1.0mhz v gs = 0v, v ds = 0v to 80v v dd = 50v i d = 5.0a r g = 6.0 ? v gs = -20v
irf6665pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.0a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 2 4 6 8 10 12 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = -40c t j = 25c t j = 150c v ds = 25v 60s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 9.0v 8.0v 7.0v bottom 6.0v 60s pulse width tj = 25c 6.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 60s pulse width tj = 150c vgs top 15v 10v 9.0v 8.0v 7.0v bottom 6.0v 0246810 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 5.0a
irf6665pbf 4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 1.6195 0.000126 2.1406 0.001354 22.2887 0.375850 20.0457 7.410000 11.9144 99 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri 4 4 r 4 r 4 a a 5 5 r 5 r 5 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 i d , d r a i n c u r r e n t ( a )
irf6665pbf www.irf.com 5 fig 14. maximum avalanche energy vs. drain current fig 16a. switching time test circuit fig 16b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 15b. unclamped inductive waveforms fig 15a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage fig 13. on-resistance vs. drain current
1 0.1 % + - 4 6 8 10 12 14 16 18 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 120 140 160 180 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 5.0a t j = 125c t j = 25c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.86a 1.3a bottom 5.0a 0 2 4 6 8 10 i d , drain current (a) 40 60 80 100 120 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c vgs = 10v
irf6665pbf 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18. for n-channel hexfet power mosfets

? ? ? + - + + + - - - ?
!" ?
#$%&%% ? !'' ? %&%%(#
&
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

irf6665pbf www.irf.com 7 directfet ? substrate and pcb layout, sh outline (small size can, h-designation). please see directfet application note an-1035 for all details regarding pcb assembly using directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source d gs d d d
irf6665pbf 8 www.irf.com

please see directfet application note an-1035 for all details regarding pcb assembly using directfet. this includes all recommendations for stencil and substrate designs.

max 0.191 0.156 0.112 0.018 0.024 0.024 0.026 0.034 0.041 0.092 0.0274 0.0031 0.007 code a b c d e f g h k l m r p min 4.75 3.70 2.75 0.35 0.58 0.58 0.63 0.83 0.99 2.29 0.616 0.020 0.08 max 4.85 3.95 2.85 0.45 0.62 0.62 0.67 0.87 1.03 2.33 0.676 0.080 0.17 min 0.187 0.146 0.108 0.014 0.023 0.023 0.025 0.033 0.039 0.090 0.0235 0.0008 0.003 imperial metric dimensions
irf6665pbf www.irf.com 9 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/06 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. directfet tape & reel dimension (showing component orientation). standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6665TRPBF). for 1000 parts on 7" reel, order irf6665tr1pbf code a b c d e f g h max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 dimensions metric imperial loaded tape feed direction min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRF6665TRPBF

	To Download IRF6665TRPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .